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-implanted GaN film studied by a monoenergetic positron beamLi, X. F.*; Chen, Z. Q.*; Liu, C.*; Zhang, H.; Kawasuso, Atsuo
Journal of Applied Physics, 117(8), p.085706_1 - 085706_6, 2015/02
Times Cited Count：23 Percentile：67.91(Physics, Applied)Vacancy-type defects in C-implanted GaN were probed using a slow positron beam. The increase of Doppler broadening S parameter indicates introduction of arge vacancy clusters. Post-implantation annealing at temperatures up to 800
C makes these vacancy clusters to agglomerate into microvoids. The vacancy clusters or microvoids show high thermal stability, and they are only partially removed after annealing up to 1000C. Amorphous regions are observed by high resolution transmission electron microscopy measurement, which directly confirms that amorphization is induced by C-implantation. The disordered GaN lattice is possibly due to special feature of carbon impurities, which enhance the damage buildup during implantation.
Aihara, Jun; Hojo, Kiichi; Furuno, Shigemi*; Ishihara, Masahiro; Yamamoto, Hiroyuki
Proceedings of 8th Asia-Pacific Conference on Electron Microscopy (8APEM) (CD-ROM), p.722 - 723, 2004/06
SiC TEM specimens were irradiated with 20keV Ne+ to the fluence of 1.5x10
Ne+/m
at 573, 583, 598 and 683K, and successively annealed at 1273K for 30minutes. In the cases of 573 and 583K irradiation, amorphization with irradiation and crystal nucleation with annealing occurred. Coalescence of the bubbles was clearly observed in the crystal nucleated area and epitaxial growth area. In the case of 593K irradiation, partial amorphization occurred but crystal nucleation did not occur. In the case of 673K irradiation, amorphization did not occur and no change was observed after annealing.
O
and MgO irradiated with energetic iodine ionsAruga, Takeo; Katano, Yoshio*; Omichi, Toshihiko*; Okayasu, Satoru; Kazumata, Yukio*; Jitsukawa, Shiro
Nuclear Instruments and Methods in Physics Research B, 197(1-2), p.94 - 100, 2002/11
Times Cited Count：9 Percentile：51.38(Instruments & Instrumentation)no abstracts in English
O
, MgAlO and MgO irradiated with energetic iodine ionsAruga, Takeo; Katano, Yoshio*; Omichi, Toshihiko*; Jitsukawa, Shiro
Surface & Coatings Technology, 158-159, p.444 - 448, 2002/09
no abstracts in English
Abe, Hiroaki
Tanso Sogenryo Kagaku To Zairyo Sekkei, 3, p.5 - 14, 2001/00
no abstracts in English
Aruga, Takeo; Katano, Yoshio; Omichi, Toshihiko; Okayasu, Satoru; Kazumata, Yukio
Nuclear Instruments and Methods in Physics Research B, 166-167, p.913 - 919, 2000/05
Times Cited Count：32 Percentile：86.89(Instruments & Instrumentation)no abstracts in English
SiUgajin, Mitsuhiro; Akabori, Mitsuo; Ito, Akinori; Ooka, Norikazu;
Journal of Nuclear Materials, 248, p.204 - 208, 1997/00
Times Cited Count：8 Percentile：56.29(Materials Science, Multidisciplinary)no abstracts in English
Hojo, Kiichi; Furuno, Shigemi; *; *; *
Nuclear Instruments and Methods in Physics Research, 127-128, p.203 - 207, 1997/00
no abstracts in English
Hojo, Kiichi; *; Furuno, Shigemi; Sasajima, Naohiko*; *
Journal of Nuclear Materials, 239(1-3), p.279 - 283, 1996/00
Times Cited Count：14 Percentile：74.12(Materials Science, Multidisciplinary)no abstracts in English
White, T. J.*;
Materials Research Society Symposium Proceedings, Vol.294, p.109 - 116, 1993/00
no abstracts in English
Arai, Yasuo; Omichi, Toshihiko
Nihon Genshiryoku Gakkai-Shi, 33(8), p.757 - 760, 1991/08
no abstracts in English
